JPH0132665B2 - - Google Patents
Info
- Publication number
- JPH0132665B2 JPH0132665B2 JP55104197A JP10419780A JPH0132665B2 JP H0132665 B2 JPH0132665 B2 JP H0132665B2 JP 55104197 A JP55104197 A JP 55104197A JP 10419780 A JP10419780 A JP 10419780A JP H0132665 B2 JPH0132665 B2 JP H0132665B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- epitaxial layer
- resistance
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 9
- 238000005192 partition Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10419780A JPS5728362A (en) | 1980-07-28 | 1980-07-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10419780A JPS5728362A (en) | 1980-07-28 | 1980-07-28 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5728362A JPS5728362A (en) | 1982-02-16 |
| JPH0132665B2 true JPH0132665B2 (en]) | 1989-07-10 |
Family
ID=14374245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10419780A Granted JPS5728362A (en) | 1980-07-28 | 1980-07-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5728362A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08125132A (ja) * | 1994-10-28 | 1996-05-17 | Rohm Co Ltd | 半導体装置 |
| JP2006295073A (ja) * | 2005-04-14 | 2006-10-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP4349456B2 (ja) | 2006-10-23 | 2009-10-21 | ソニー株式会社 | 固体撮像素子 |
-
1980
- 1980-07-28 JP JP10419780A patent/JPS5728362A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5728362A (en) | 1982-02-16 |
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